page . 1 november 10,2011-rev.00 PJSD03LCTM bi-directional esd protection diode this bi-directional tvs has been designed to protect sensitive equipment against esd and to prevent latch-up events in cmos circuitry operating at 3.3vdc and below.this offers an integrated solution to protect a single data line where the board space is a premium. maximum ratings (t a =25 o c unless otherwise noted) electrical characteristics (t a =25 o c unless otherwise noted) specification features ? 50w power dissipation (8/20 s waveform) ? low leakage current, maximum of 2.5 a@3.3vdc ? very low clamping voltage applications ? video i/o ports protection ? set top boxes ? portable instrumentation parameter symbol condition min. typ. max. units reverse stand-off voltage v rwm --3 . 3 v reverse breakdown voltage v br i br =1ma 5.4 - 7.0 v reverse leakage current i r v r =3.3v - - 2.5 a clamping voltage (8/20ms) v c i pp =3a - 14 16.6 v off state junction capacitance c j 0 vdc bias f=1mh z -13- pf rating symbol value units peak pulse power (8/20 s waveform) p pp 50 w peak pulse current (8/20 s waveform) i ppm 3 a iec61000-4-2 contact v esd + 8 kv iec61000-4-2 air v esd + 15 kv operating junction and storage temperature range t j ,t stg -55 to +150 o c ? iec 61000-4-2 esd + 15kv air, + 8kv contact compliance ? / h d g i u h h l q f r p s o \ z l w k ( 8 5 r + 6 ( & |